Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeTáirgíGabhálais modúl cliste tionsclaíochSonraíochtaí Modúl Cuimhne DDR3 UDIMM

Sonraíochtaí Modúl Cuimhne DDR3 UDIMM

Cineál Íocaíochta:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Ordú:
1 Piece/Pieces
Iompar:
Ocean,Air,Express,Land
  • Cur síos ar an Táirge
Overview
Tréithe Táirgí

Múnla Uimh.NSO4GU3AB

Cumas Soláthair agus Faisnéis Bhreise

IomparOcean,Air,Express,Land

Cineál ÍocaíochtaL/C,T/T,D/A

IncotermFOB,EXW,CIF

Pacáistiú & Seachadadh
Aonaid Díol:
Piece/Pieces

4GB 1600MHz 240-bioráin DDR3 Udimm


Stair athbhreithnithe

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Tábla faisnéise a ordú

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Saghas
Hengstar DDR3 DDR3 SDRAM DIDM (Ráta Sonraí Dúbailte Unbuffred DRAM Sioncronach DRAM DRAM DRAM MODULLES CUMHACHTAÍ CUMHACHTA AR LÍNE) MODULLES CUMHACHT ARD-Luas a úsáideann feistí DDR3 SDRAM. Tá NS04GU3AB ina 512m x 64-giotán dhá chéim 4GB DDR3-1600 CL11 1.5V Táirge DIMM SDRAM SDRAM, bunaithe ar chomhpháirt FBGA 256M x 8-giotán. Tá an SPD cláraithe le huainiú Latency Caighdeán Jedec DDR3-1600 de 11-11-11 ag 1.5V. Úsáideann gach DIMM 240 bioráin méara teagmhála óir. Tá an SDRAM Unbuffred DIMM ceaptha le húsáid mar phríomhchuimhne nuair a shuiteáiltear é i gcórais ar nós ríomhairí pearsanta agus stáisiúin oibre.


Bheith
Soláthar Soláthar Cumhachta: VDD = 1.5V (1.425V go 1.575V)
vddq = 1.5V (1.425V go 1.575V)
800MHz FCK do 1600MB/soic/bioráin
8 Banc Inmheánach Neamhspleách
 Latency Cas In -Inbhainte: 11, 10, 9, 8, 7, 6
 Latency Breiseán In -Inbhainte: 0, Cl - 2, nó Cl -1 Clog
8-giotán Réamh-Fetch
Fad Fad an Phoist: 8 (Interleave gan aon teorainn, seicheamhach le seoladh tosaigh “000” amháin), 4 le TCCD = 4 nach gceadaíonn léamh nó scríobh gan uaim [ar an eitilt ag baint úsáide as A12 nó MRS]
 Sonraí difreálach difreálach BI-Directional
Calabrú Internal (féin); Féin -chalabrú inmheánach trí PIN ZQ (RZQ: 240 Ohm ± 1%)
Tá foirceannadh bás ag baint úsáide as bioráin ODT
 Tréimhse athnuachana meánmhéide 7.8US ag níos ísle ná TACES 85 ° C, 3.9US ag 85 ° C <TCacate <95 ° C.
Asynchronous Athshocrú
Tá neart tiomána aschuir inchoigeartaithe
Topology topology efly-by
PCB: Airde 1.18 ”(30mm)
ROHS comhlíonta agus saor ó halaigine


Príomhpharaiméadair uainiúcháin

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tábla seoltaí

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Tuairiscí bioráin

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Nótaí : Is é an tábla cur síos ar an bpionna thíos liosta cuimsitheach de gach bioráin fhéideartha do gach modúl DDR3. Féadfaidh gach bioráin atá liostaithe gan tacaíocht a thabhairt ar an modúl seo. Féach tascanna PIN le haghaidh faisnéise a bhaineann go sonrach leis an modúl seo.


Léaráid bloc feidhmiúil

4GB, modúl 512mx64 (2rank de x8)

1


2


Nóta:
1. Tá an liathróid ZQ ar gach comhpháirt DDR3 ceangailte le friotóir seachtrach 240Ω ± 1% atá ceangailte leis an talamh. Úsáidtear é chun an tiománaí foirceanta agus aschuir ar an gcomhpháirt a chalabrú.



Toisí modúil


Amharc tosaigh

3

Amharc tosaigh

4

Nótaí:
1. Tá na toisí uile i milliméadair (orlach); Max/min nó tipiciúil (typ) nuair a tugadh faoi deara é.
2.Taisc ar gach toise ± 0.15mm mura sonraítear a mhalairt.
3.Tá an léaráid tríthoiseach le haghaidh tagartha amháin.

Catagóirí Táirge : Gabhálais modúl cliste tionsclaíoch

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    Mr. Jummary
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